A team of domestic researchers has found a way to prevent malfunctions in next-generation memory chips.

The team, led by Professor Lee Kyung-jin at Korea University, said it has succeeded in using quantum effects to control the recording characteristics of magnetic memory chips.

The team said the magnetization of nanopillar devices can be switched electrically through the use of spin-transfer torque.

The findings have been published in the British science journal “Nature Physics.”