Domestic researchers have developed a new technology to make advanced compound semiconductors more energy-efficient than existing semiconductors.

The Hanyang University team, led by Oh Jae-eung, said Tuesday that it has developed a "self-aligned dislocation annihilation" method to coat regular silicon-based semiconductors with new, more efficient materials.

The team explained that compared with existing silicon semiconductors, the new method greatly increases the speed of the electrons' movements, and also lowers the production cost for semiconductor wafers and light-emitting diode products.

The study results have been published in the latest issue of Nanotechnology.