Hynix Semiconductor will mass produce from the second half of next year a 54-nano one-gigabyte DDR2 DRAM chip.

The world's second-largest producer of chips has recently developed a technology to produce 54-nano chips and has received certification from Intel of the United States.

The ultra-high speed chip processes information at the speed of 800Mbps.

Hynix will apply the technology to the production of 1 gigabyte DDR3 DRAM chips.

Hynix is the second Korean chipmaker to receive Intel certification for a 50-nano level 1-gigabyte DRAM chip, following Samsung electronics.

Analysts say this will signal the continued lead of Korean chipmakers in the global DRAM market next year.