Samsung Electronics says it has developed what it says is the world’s first one gigabit dynamic random access memory (DRAM) chip for mobile applications, using 80 nanometer process technology.

The world leader in semiconductors said Wednesday that the new chip is at least 20 percent thinner than a multi-stack package of 512-megabit chips.

According to the firm, the new chip also reduces power drain in standby mode by 30 percent over conventional memory chip designs by using a new temperature-sensing feature which maximizes the self-refresh cycle.

Samsung plans to mass produce the new chips beginning in the second quarter of next year to increase its global market share for high-density mobile DRAMs.