Samsung Electronics says that it has unveiled its next generation vertical NAND(V-NAND) solution on Wednesday during the 2016 Flash Memory Summit under way in Santa Clara, California.

At the summit, Samsung revealed mid- to long-term corporate strategies to strengthen its leadership in three dimensional memory technologies and in an era of tera-data, based on its latest fourth generation, 64-layer vertical NAND flash memory.

Flash memory is a solid-state chip that maintains stored data without any external power source. Along with RAM or random-access memory, flash memory makes up one of the two huge pillars of the memory chips industry.

One terabyte is one thousand gigabytes or one trillion bytes. 

The Flash Memory Summit is the world's largest conference of the flash memory industry.