Samsung Electronics has announced the release of its latest ten-nanometer dynamic random access memory(DRAM) chips, a first for the industry.

Company officials said Tuesday that the firm began mass production of the eight-gigabit double-data-rate-four(DDR4) chips in February.

The development of the chips comes after Samsung for the first time began production of the 20-nanometer four-gigabit double-data-rate-three DRAM chips in 2014.

Samsung officials said the chip utilized the quadruple patterning technique, proprietary cell design technology and ultra-thin dielectric layer deposition. The technologies allowed the firm to avoid using extreme ultra violet equipment and enhance production capabilities of the new chips.

The ten-nanometer chips are also able to transfer data at three-thousand-200 megabits per second, 30 percent faster than the 20-nanometer DDR4 chips.